Invention Grant
- Patent Title: Integrated circuit design method and system
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Application No.: US16459116Application Date: 2019-07-01
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Publication No.: US10970438B2Publication Date: 2021-04-06
- Inventor: Tien-Chien Huang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: G06F30/30
- IPC: G06F30/30 ; G06F30/20 ; G06F111/12

Abstract:
A method of generating a layout diagram of an IC device includes assigning a leakage constraint to a first schematic net of the IC device and determining a violation of the leakage constraint based on a dummy gate region. The IC layout diagram includes the dummy gate region between a first component of the first schematic net and a second component of a second schematic net of the IC device. The method includes modifying the IC layout diagram in response to the leakage constraint violation, and generating a layout file based on the modified IC layout diagram.
Public/Granted literature
- US20200042663A1 INTEGRATED CIRCUIT DESIGN METHOD AND SYSTEM Public/Granted day:2020-02-06
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