Invention Grant
- Patent Title: Cell structures and semiconductor devices having same
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Application No.: US15782232Application Date: 2017-10-12
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Publication No.: US10970450B2Publication Date: 2021-04-06
- Inventor: Fong-Yuan Chang , Jyun-Hao Chang , Sheng-Hsiung Chen , Ho Che Yu , Lee-Chung Lu , Ni-Wan Fan , Po-Hsiang Huang , Chi-Yu Lu , Jeo-Yen Lee
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: G06F30/392
- IPC: G06F30/392 ; H01L27/118 ; G06F30/398 ; G06F30/39 ; H01L23/538 ; H01L27/02

Abstract:
A semiconductor device comprising active areas and a structure. The active areas are formed as predetermined shapes on a substrate and arranged relative to a grid having first and second tracks which are substantially parallel to corresponding orthogonal first and second directions; The active areas are organized into instances of a first row having a first conductivity and a second row having a second conductivity. Each instance of the first row and of the second row includes a corresponding first and second number predetermined number of the first tracks. The structure has at least two contiguous rows including: at least one instance of the first row; and at least one instance of the second row. In the first direction, the instance(s) of the first row have a first width and the instance(s) of the second row a second width substantially different than the first width.
Public/Granted literature
- US20180150592A1 CELL STRUCTURES AND SEMICONDUCTOR DEVICES HAVING SAME Public/Granted day:2018-05-31
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