A random-access memory cell includes first and second voltage supply nodes, first and second complementary output nodes, first and second complementary bit lines associated with the memory cell, and a word line associated with the memory cell. Pairs of series-connected cross-coupled p-channel and n-channel hybrid FinFET transistors are connected between the voltage supply nodes, the first bit line coupled to the first output node, and the second bit line coupled to the second output node.