Invention Grant
- Patent Title: Storage device and methods with fault tolerance capability for neural networks
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Application No.: US16863959Application Date: 2020-04-30
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Publication No.: US10971221B2Publication Date: 2021-04-06
- Inventor: Shaoli Liu , Xuda Zhou , Zidong Du , Daofu Liu
- Applicant: Shanghai Cambricon Information Technology Co., Ltd
- Applicant Address: CN Pudong New Area
- Assignee: Shanghai Cambricon Information Technology Co., Ltd
- Current Assignee: Shanghai Cambricon Information Technology Co., Ltd
- Current Assignee Address: CN Pudong New Area
- Agency: Getech Law LLC
- Agent Jun Ye
- Main IPC: G11C11/419
- IPC: G11C11/419 ; G06N3/063 ; G11C11/16 ; G11C29/42

Abstract:
Aspect for storage device with fault tolerance capability for neural networks are described herein. The aspects may include a first storage unit of a storage device. The first storage unit is configured to store one or more first bits of data and the data includes floating point type data and fixed point type data. The first bits include one or more sign bits of the floating point type data and the fixed point type data. The aspect may further include a second storage unit of the storage device. The second storage unit may be configured to store one or more second bits of the data. In some examples, the first storage unit may include an ECC memory and the second storage unit may include a non-ECC memory. The ECC memory may include an ECC check Dynamic Random Access Memory and an ECC check Static Random Access Memory.
Public/Granted literature
- US20210035628A1 STORAGE DEVICE AND METHOD, DATA PROCESSING DEVICE AND METHOD, ELECTRONIC DEVICE Public/Granted day:2021-02-04
Information query
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