Invention Grant
- Patent Title: Phase change memory operation method and circuit
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Application No.: US16547106Application Date: 2019-08-21
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Publication No.: US10971223B2Publication Date: 2021-04-06
- Inventor: Yu-Sheng Chen , Jau-Yi Wu , Chia-Wen Chang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: G11C13/00
- IPC: G11C13/00 ; G06N3/063

Abstract:
A method includes applying a pulse sequence to a PCM device, each pulse of the pulse sequence including a pulse number, an amplitude, a leading edge, a pulse width, and a trailing edge, the trailing edge having a duration longer than a duration of the leading edge. Applying the pulse sequence includes increasing the pulse number while increasing at least one of the amplitude, the pulse width, or the trailing edge duration. A conductance level of the PCM device is altered in response to applying the pulse sequence.
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