The device provides a resistive memory device for storing elements of hyper-dimensional vectors, in particular digital hyper-dimensional, as conductive statuses in components in particular in 2D-memristors, of the resistive memory device, wherein the resistive memory device provides a first crossbar array of the components, wherein the components are memristive 2D components addressable by word-lines and bit-lines, and a peripheral circuit connected to the word-lines and bit-lines and adapted for encoding operations by activating the word-lines and bit-lines sequentially in a predefined manner.