Invention Grant
- Patent Title: Method of forming a complementary metal oxide semiconductor device having fin field effect transistors with a common metal gate
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Application No.: US16432346Application Date: 2019-06-05
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Publication No.: US10971407B2Publication Date: 2021-04-06
- Inventor: Takashi Ando , Choonghyun Lee , Pouya Hashemi , Jingyun Zhang
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Robert Sullivan
- Main IPC: H01L21/8228
- IPC: H01L21/8228 ; H01L21/8238 ; H01L29/51 ; H01L21/28 ; H01L29/08 ; H01L27/092 ; H01L29/78 ; H01L29/10 ; H01L29/49
Abstract:
A method of forming a complementary metal oxide semiconductor (CMOS) device is provided. The method includes forming a separate gate structure on each of a pair of vertical fins, wherein the gate structures include a gate dielectric layer and a gate metal layer, and forming a protective liner layer on the gate structures. The method further includes heat treating the pair of gate structures, and replacing the protective liner layer with an encapsulation layer. The method further includes exposing a portion of the gate dielectric layer by recessing the encapsulation layer. The method further includes forming a top source/drain on the top surface of one of the pair of vertical fins, and subjecting the exposed portion of the gate dielectric layer to a second heat treatment conducted in an oxidizing atmosphere.
Information query
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