Invention Grant
- Patent Title: Method of forming a thermal shield in a monolithic 3-D integrated circuit
-
Application No.: US16374524Application Date: 2019-04-03
-
Publication No.: US10971420B2Publication Date: 2021-04-06
- Inventor: Wei-E Wang , Mark S. Rodder , Vassilios Gerousis
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Lewis Roca Rothgerber Christie LLP
- Main IPC: H01L23/367
- IPC: H01L23/367 ; H01L23/373 ; H01L23/522 ; H01L25/065 ; H01L27/06

Abstract:
A monolithic three-dimensional integrated circuit including a first device, a second device on the first device, and a thermal shield stack between the first device and the second device. The thermal shield stack includes a thermal retarder portion having a low thermal conductivity in a vertical direction, and a thermal spreader portion having a high thermal conductivity in a horizontal direction. The thermal shield stack of the monolithic three-dimensional integrated circuit includes only dielectric materials.
Information query
IPC分类: