Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16093188Application Date: 2017-04-14
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Publication No.: US10971430B2Publication Date: 2021-04-06
- Inventor: Takeshi Muneishi
- Applicant: KYOCERA CORPORATION
- Applicant Address: JP Kyoto
- Assignee: KYOCERA CORPORATION
- Current Assignee: KYOCERA CORPORATION
- Current Assignee Address: JP Kyoto
- Agency: Viering, Jentschura & Partnermbb
- Priority: JPJP2016-082526 20160415
- International Application: PCT/JP2017/015404 WO 20170414
- International Announcement: WO2017/179736 WO 20171019
- Main IPC: H01L23/473
- IPC: H01L23/473 ; H01L23/373 ; H01L23/495 ; H01L23/36 ; H01L25/07 ; H01L25/18 ; H01L23/31 ; H01L23/34 ; H05K7/20 ; H01L21/48 ; H01L25/00 ; H01L23/00

Abstract:
A semiconductor device may include a cooling unit, the cooling unit including a circuit unit, a first flow path member comprised of an insulating material, and a second flow path member comprised of an insulating material. The circuit unit may include a heat sink layer, a wiring layer, and a semiconductor element that is disposed between the heat sink layer and the wiring layer. The circuit unit is disposed between the first flow path member and the second flow path member. The wiring layer may face the first flow path member or the second flow path member.
Public/Granted literature
- US20190122956A1 SEMICONDUCTOR DEVICE Public/Granted day:2019-04-25
Information query
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