Invention Grant
- Patent Title: Semiconductor package having an impedance-boosting channel
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Application No.: US16326688Application Date: 2016-09-30
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Publication No.: US10971440B2Publication Date: 2021-04-06
- Inventor: Bok Eng Cheah , Jackson Chung Peng Kong , Khang Choong Yong , Po Yin Yaw , Kok Hou Teh
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt, P.C.
- International Application: PCT/US2016/054943 WO 20160930
- International Announcement: WO2018/063381 WO 20180405
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L23/538 ; H01L25/065 ; H01L25/10 ; H01L23/64 ; H01L23/66

Abstract:
Semiconductor package assemblies and semiconductor packages incorporating an impedance-boosting channel between a transmitter die and a receiver die are described. In an example, a semiconductor package includes a package substrate incorporating the impedance-boosting channel having a first arc segment connected to the transmitter die and a second arc segment connected to the receiver die. The arc segments extend around respective vertical axes passing through a transmitter die electrical bump and a receiver die electrical bump, respectively. Accordingly, the arc segments introduce an inductive circuitry to increase signal integrity of an electrical signal sent from the transmitter die to the receiver die.
Public/Granted literature
- US20190181080A1 SEMICONDUCTOR PACKAGE HAVING AN IMPEDANCE-BOOSTING CHANNEL Public/Granted day:2019-06-13
Information query
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