- Patent Title: Packages with Si-substrate-free interposer and method forming same
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Application No.: US16901330Application Date: 2020-06-15
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Publication No.: US10971443B2Publication Date: 2021-04-06
- Inventor: Chen-Hua Yu , Sung-Feng Yeh , Ming-Fa Chen , Hsien-Wei Chen
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L25/10 ; H01L25/00 ; H01L21/683 ; H01L25/065 ; H01L21/56 ; H01L23/00 ; H01L23/31

Abstract:
A method includes forming a plurality of dielectric layers, forming a plurality of redistribution lines in the plurality of dielectric layers, forming stacked vias in the plurality of dielectric layers with the stacked vias forming a continuous electrical connection penetrating through the plurality of dielectric layers, forming a dielectric layer over the stacked vias and the plurality of dielectric layers, forming a plurality of bond pads in the dielectric layer, and bonding a device die to the dielectric layer and a first portion of the plurality of bond pads through hybrid bonding.
Public/Granted literature
- US20200312758A1 Packages with Si-Substrate-Free Interposer and Method Forming Same Public/Granted day:2020-10-01
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