Invention Grant
- Patent Title: Three-dimensional monolithic vertical transistor memory cell with unified inter-tier cross-couple
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Application No.: US16733772Application Date: 2020-01-03
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Publication No.: US10971504B2Publication Date: 2021-04-06
- Inventor: Joshua M. Rubin
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetlo, P.C.
- Agent Steven Meyers
- Main IPC: G11C11/00
- IPC: G11C11/00 ; H01L27/11 ; H01L27/02 ; H01L21/8234 ; H01L27/06
Abstract:
A semiconductor device includes a three-dimensional monolithic vertical transistor memory cell with unified inter-tier cross-couple, including a bottom tier including a contact disposed on a first inverter gate, a top tier including a second inverter gate, and a monolithic inter-tier via (MIV) that lands on the contact via the second inverter gate.
Information query
