Invention Grant
- Patent Title: TFT array substrate and manufacturing method thereof
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Application No.: US16091948Application Date: 2018-06-08
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Publication No.: US10971525B1Publication Date: 2021-04-06
- Inventor: Zhichao Zhou , Hui Xia , Meng Chen
- Applicant: SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.
- Applicant Address: CN Guangdong
- Assignee: SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.
- Current Assignee: SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.
- Current Assignee Address: CN Guangdong
- Agent Leong C. Lei
- Priority: CN201810395559.7 20180427
- International Application: PCT/CN2018/090376 WO 20180608
- International Announcement: WO2019/205235 WO 20191031
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L27/12

Abstract:
The present invention teaches a TFT array substrate and its manufacturing method including the following steps. A data line and a ring-shaped source electrode are formed on a substrate. A first insulation layer is formed on the substrate. A ring trough exposing the source electrode is formed on the first insulation layer. A semiconductor active layer is formed in the ring trough. A channel is formed on the first insulation layer in an area surrounded by the ring trough. A gate line, a gate electrode in the channel, and a drain electrode connected to the semiconductor active layer are formed on the first insulation layer. A second insulation layer is formed on the first insulation layer, and a pixel via is formed on the second insulation layer. A pixel electrode is formed on the second insulation layer, and is connected to the drain electrode through the pixel via.
Public/Granted literature
- US20210118914A1 TFT ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF Public/Granted day:2021-04-22
Information query
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