Provided is a power semiconductor device that prevents element breakage, thus improving its reliability. The power semiconductor device includes a first main electrode. The first main electrode includes a first metal film, an intermediate film, and a second metal film. The first and second metal films are made of metal having an Al concentration greater than or equal to 95 wt %. The intermediate film contains primary-constituent phases each formed of a metal compound, and contains a secondary-constituent phase formed of an iron group element. The metal compound is that of at least one kind of element selected from a group consisting of a group 4A element, a group 5A element, and a group 6A element, and at least one kind of element selected from a group consisting of C and N. The intermediate film has a higher degree of hardness than the second metal film.