Invention Grant
- Patent Title: Wavy channel flexible thin-film-transistor on a flexible substrate and method of producing such a thin-film-transistor
-
Application No.: US16486107Application Date: 2018-01-12
-
Publication No.: US10971603B2Publication Date: 2021-04-06
- Inventor: Amir Nabil Hanna , Muhammad Mustafa Hussain
- Applicant: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY
- Applicant Address: SA Thuwal
- Assignee: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY
- Current Assignee: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY
- Current Assignee Address: SA Thuwal
- Agency: Patent Portfolio Builders PLLC
- International Application: PCT/IB2018/050207 WO 20180112
- International Announcement: WO2018/162993 WO 20180913
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/423 ; H01L29/786 ; H01L21/28 ; H01L21/3065

Abstract:
A method for producing a thin-film-transistor involves forming a flexible substrate on a rigid substrate, forming a plurality of fins and trenches in a structural layer arranged on the flexible substrate, forming a wavy gate layer, channel layer, source contact layer, and drain contact layer on each of the plurality of fins and each of a plurality of trenches of the structural layer, and removing the plurality of fins and trenches having the wavy gate, channel, source contact, and drain contact layers from the rigid substrate.
Public/Granted literature
Information query
IPC分类: