Invention Grant
- Patent Title: High voltage diode on SOI substrate with trench-modified current path
-
Application No.: US16450298Application Date: 2019-06-24
-
Publication No.: US10971632B2Publication Date: 2021-04-06
- Inventor: Jaroslav Pjencak , Moshe Agam , Johan Camiel Julia Janssens
- Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Applicant Address: US AZ Phoenix
- Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee Address: US AZ Phoenix
- Agency: Brake Hughes Bellermann LLP
- Main IPC: H01L29/86
- IPC: H01L29/86 ; H01L29/06 ; H01L29/78 ; H01L29/861 ; H01L21/762 ; H01L29/66 ; H01L29/40
Abstract:
A semiconductor device may include a Silicon on Insulator (SOI) substrate, and a diode formed on the SOI substrate, the diode including a cathode region and an anode region. The semiconductor device may include at least one breakdown voltage trench disposed at an edge of the cathode region, and between the cathode region and the anode region.
Information query
IPC分类:
