Invention Grant
- Patent Title: Random-access memory array memory cell selection
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Application No.: US16562507Application Date: 2019-09-06
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Publication No.: US10978140B2Publication Date: 2021-04-13
- Inventor: Paul Alan Bunce , John Davis , Brian James Yavoich , Russell Hayes
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent William Kinnaman
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/417 ; G11C11/412

Abstract:
An aspect a bit selection path configured to propagate a bit selection signal. The bit selection path includes bit selection delay circuitry defining a bit selection delay. The memory array includes a row selection path configured to propagate a row selection signal. The row selection path includes row selection delay circuitry defining a row selection delay. The memory array includes local selection circuitry. The local selection circuitry is configured to receive the bit selection signal from the bit selection path before the row selection signal from the row selection path according to the bit selection delay and the row selection delay.
Public/Granted literature
- US20210074351A1 RANDOM-ACCESS MEMORY ARRAY MEMORY CELL SELECTION Public/Granted day:2021-03-11
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