Invention Grant
- Patent Title: Semi-insulating crystal, N-type semiconductor crystal and P-type semiconductor crystal
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Application No.: US16344118Application Date: 2017-07-13
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Publication No.: US10978294B2Publication Date: 2021-04-13
- Inventor: Hajime Fujikura
- Applicant: SCIOCS COMPANY LIMITED , SUMITOMO CHEMICAL COMPANY, LIMITED
- Applicant Address: JP Ibaraki; JP Tokyo
- Assignee: SCIOCS COMPANY LIMITED,SUMITOMO CHEMICAL COMPANY, LIMITED
- Current Assignee: SCIOCS COMPANY LIMITED,SUMITOMO CHEMICAL COMPANY, LIMITED
- Current Assignee Address: JP Ibaraki; JP Tokyo
- Agency: Pearne & Gordon LLP
- Priority: JPJP2016-210939 20161027
- International Application: PCT/JP2017/025552 WO 20170713
- International Announcement: WO2018/078962 WO 20180503
- Main IPC: H01L21/02
- IPC: H01L21/02 ; C30B25/02 ; C30B29/40
Abstract:
Provided is a semi-insulating crystal represented by a composition formula InxAlyGa1-x-yN (satisfying 0≤x≤1, 0≤y≤1, 0≤x+y≤1), wherein each concentration of Si, B, and Fe in the crystal is less than 1×1015 at/cm3, electric resistivity under a temperature condition of 20° C. or more and 200° C. or less is 1×106 Ωcm or more.
Public/Granted literature
- US20190326111A1 SEMI-INSULATING CRYSTAL, N-TYPE SEMICONDUCTOR CRYSTAL AND P-TYPE SEMICONDUCTOR CRYSTAL Public/Granted day:2019-10-24
Information query
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