Invention Grant
- Patent Title: Morphology of resist mask prior to etching
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Application No.: US16118851Application Date: 2018-08-31
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Publication No.: US10978301B2Publication Date: 2021-04-13
- Inventor: Ching-Yu Chang , Jung-Hau Shiu , Wei-Ren Wang , Shing-Chyang Pan , Tze-Liang Lee
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/027
- IPC: H01L21/027 ; H01L21/02 ; H01L21/033 ; H01L21/768 ; H01L21/311 ; H01L21/8234 ; H01L29/66 ; H01L21/3105

Abstract:
Embodiments provide a patterning process. A photoresist layer is patterned. At least portions of the photoresist layer are converted from an organic material to an inorganic material by a deposition process of a metal oxide. All or some of the patterned photoresist layer may be converted to a carbon-metal-oxide. A metal oxide crust may be formed over the patterned photoresist layer. After conversion, the patterned photoresist layer is used as an etch mask to etch an underlying layer.
Public/Granted literature
- US20200075319A1 Morphology of Resist Mask Prior to Etching Public/Granted day:2020-03-05
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