Invention Grant
- Patent Title: Deposition process
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Application No.: US16938049Application Date: 2020-07-24
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Publication No.: US10978307B2Publication Date: 2021-04-13
- Inventor: David O'Meara , Eric Chih-Fang Liu , Richard Farrell , Soo Doo Chae
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Main IPC: H01L21/3065
- IPC: H01L21/3065 ; H01L21/033 ; H01L21/02

Abstract:
A method of patterning a substrate includes receiving a substrate having microfabricated structures, including mandrels; executing a deposition process that deposits a first material on the mandrels, the deposition process including cyclically moving the substrate through a set of deposition modules. The substrate is moved through the set of deposition modules so that the first material is deposited at a first thickness at top portions of the mandrels and at a second thickness at bottom portions of mandrels, the first thickness being greater than the second thickness. The method includes executing a spacer deposition process that conformally deposits a second material on the substrate; executing a spacer open etch that removes depositions of the second material from over a top surface of the mandrels; removing the first material and the mandrels from the substrate, leaving sidewall spacers; and transferring a pattern defined by the sidewall spacers into an underlying layer.
Public/Granted literature
- US20210057226A1 DEPOSITION PROCESS Public/Granted day:2021-02-25
Information query
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