Invention Grant
- Patent Title: Semiconductor device methods of manufacture
-
Application No.: US16290557Application Date: 2019-03-01
-
Publication No.: US10978373B2Publication Date: 2021-04-13
- Inventor: Shih-Chang Ku , Hung-Chi Li , Tsung-Shu Lin , Tsung-Yu Chen , Wensen Hung
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L23/34
- IPC: H01L23/34 ; H01L23/427 ; H01L21/48 ; H01L25/00 ; H01L25/065

Abstract:
A semiconductor device includes a vapor chamber lid for high power applications such as chip-on-wafer-on-substrate (CoWoS) applications using high performance processors (e.g., graphics processing unit (GPU)) and methods of manufacturing the same. The vapor chamber lid provides a thermal solution which enhances the thermal performance of a package with multiple chips. The vapor chamber lid improves hot spot dissipation in high performance chips, for example, at the three-dimensional (3D-IC) packaging level.
Public/Granted literature
- US20190385929A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE Public/Granted day:2019-12-19
Information query
IPC分类: