Invention Grant
- Patent Title: Hybrid dielectric scheme for varying liner thickness and manganese concentration
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Application No.: US16131553Application Date: 2018-09-14
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Publication No.: US10978393B2Publication Date: 2021-04-13
- Inventor: Benjamin D. Briggs , Lawrence A. Clevenger , Nicholas A. Lanzillo , Takeshi Nogami , Christopher J. Penny , Michael Rizzolo
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent James Nock
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/532 ; H01L23/522
Abstract:
A semiconductor device is provided and includes first and second dielectrics, first and second conductive elements, a self-formed-barrier (SFB) and a liner. The first and second dielectrics are disposed with one of first-over-second dielectric layering and second-over-first dielectric layering. The first and second conductive elements are respectively suspended at least partially within a lower one of the first and second dielectrics and at least partially within the other one of the first and second dielectrics. The self-formed-barrier (SFB) is formed about a portion of one of the first and second conductive elements which is suspended in the second dielectric. The liner is deposited about a portion of the other one of the first and second conductive elements which is partially suspended in the first dielectric.
Public/Granted literature
- US20190013278A1 HYBRID DIELECTRIC SCHEME FOR VARYING LINER THICKNESS AND MANGANESE CONCENTRATION Public/Granted day:2019-01-10
Information query
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