Invention Grant
- Patent Title: Wiring structure and method for manufacturing the same
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Application No.: US16398016Application Date: 2019-04-29
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Publication No.: US10978417B2Publication Date: 2021-04-13
- Inventor: Wen Hung Huang
- Applicant: Advanced Semiconductor Engineering, Inc.
- Applicant Address: TW Kaohsiung
- Assignee: Advanced Semiconductor Engineering, Inc.
- Current Assignee: Advanced Semiconductor Engineering, Inc.
- Current Assignee Address: TW Kaohsiung
- Agency: Foley & Lardner LLP
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/48 ; H01L23/522 ; H01L21/768

Abstract:
A wiring structure includes an upper conductive structure, a lower conductive structure and an intermediate layer. The upper conductive structure includes at least one upper dielectric layer and at least one upper circuit layer in contact with the dielectric layer. The lower conductive structure includes at least one lower dielectric layer and at least one lower circuit layer in contact with the lower dielectric layer. The at least one lower dielectric layer of the lower conductive structure is substantially free of glass fiber. The intermediate layer is disposed between the upper conductive structure and the lower conductive structure and bonds the upper conductive structure and the lower conductive structure together. The upper conductive structure is electrically connected to the lower conductive structure.
Public/Granted literature
- US20200343212A1 WIRING STRUCTURE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2020-10-29
Information query
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