Invention Grant
- Patent Title: Electrostatic discharge (ESD) protection device and forming method thereof
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Application No.: US16446599Application Date: 2019-06-19
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Publication No.: US10978442B2Publication Date: 2021-04-13
- Inventor: Ying-Wei Tseng , Chun Chiang , Ping-Chen Chang , Tien-Hao Tang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: TW108118572 20190529
- Main IPC: H01L27/02
- IPC: H01L27/02

Abstract:
An electrostatic discharge (ESD) protection device and a method thereof are presented. A well is disposed in a substrate. A gate is disposed on the well. A source region and a drain region are located in the well and at two opposite sides of the gate respectively. A first doped region is located in the drain region, wherein the first doped region is electrically connected to the drain region. A second doped region is located in the source region, wherein the second doped region is electrically connected to the source region. A third doped region is located in the well and at a side of the drain region opposite to the gate. A fourth doped region is located in the well and at a side of the source region opposite to the gate, wherein the fourth doped region is electrically connected to the third doped region.
Public/Granted literature
- US20200381415A1 ELECTROSTATIC DISCHARGE (ESD) PROTECTION DEVICE AND FORMING METHOD THEREOF Public/Granted day:2020-12-03
Information query
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