Invention Grant
- Patent Title: Electrostatic discharge protection circuit and semiconductor circuit
-
Application No.: US15964909Application Date: 2018-04-27
-
Publication No.: US10978445B2Publication Date: 2021-04-13
- Inventor: Ming-Fang Lai , Liang-Yu Su , Hang Fan
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C., Intellectual Property Attorneys
- Agent Anthony King
- Priority: CN201810094319.3 20180131
- Main IPC: H02H9/04
- IPC: H02H9/04 ; H01L27/02 ; H01L27/06 ; H03K17/081 ; H01L29/20 ; H01L29/778

Abstract:
The present disclosure provides a electrostatic discharge (ESD) protection circuit, coupled between a first reference terminal and a second reference terminal; the ESD protection circuit includes a first voltage divider, a second voltage divider, a first trigger circuit and a second trigger circuit. The first trigger circuit includes a first terminal and a second terminal, wherein the first terminal is coupled to the first reference terminal, and the second terminal is coupled to the second reference terminal via the first voltage divider. The second trigger circuit includes a first terminal and a second terminal, wherein the first terminal is coupled to the second reference terminal, the second terminal is coupled to the first reference terminal via the second voltage divider, and the second trigger circuit and the first trigger circuit are in parallel connection.
Public/Granted literature
- US20190237456A1 ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT AND SEMICONDUCTOR CIRCUIT Public/Granted day:2019-08-01
Information query