Invention Grant
- Patent Title: Antifuse array and method of forming antifuse using anodic oxidation
-
Application No.: US16656270Application Date: 2019-10-17
-
Publication No.: US10978461B2Publication Date: 2021-04-13
- Inventor: Jenn-Gwo Hwu , Wei-Cheng Tian , Samuel C. Pan , Chao-Hsiung Wang , Chi-Wen Liu
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd , National Taiwan University
- Applicant Address: TW Hsinchu; TW Taipei
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd,National Taiwan University
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd,National Taiwan University
- Current Assignee Address: TW Hsinchu; TW Taipei
- Agency: Slater Matsil, LLP
- Main IPC: H01L27/112
- IPC: H01L27/112 ; H01L23/525 ; C25D11/02 ; B82Y10/00 ; B82Y40/00 ; H01L29/40 ; H01L29/423 ; H01L29/06 ; H01L21/768 ; H01L21/02 ; H01L29/775

Abstract:
A method for forming an antifuse on a substrate is provided, which comprises: forming a first conductive material on the substrate; placing the first conductive material in an electrolytic solution; performing anodic oxidation on the first conductive material to form a nanowire made of the first conductive material and surrounded by a first dielectric material formed during the anodic oxidation and to form the antifuse on the nanowire; and forming a second conductive material on the antifuse to sandwich the antifuse between the first conductive material and the second conductive material.
Public/Granted literature
- US20200051988A1 Antifuse Array and Method of Forming Antifuse Using Anodic Oxidation Public/Granted day:2020-02-13
Information query
IPC分类: