Invention Grant
- Patent Title: Power diode and method of manufacturing a power diode
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Application No.: US16104799Application Date: 2018-08-17
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Publication No.: US10978596B2Publication Date: 2021-04-13
- Inventor: Anton Mauder , Mario Barusic , Markus Bina , Matteo Dainese
- Applicant: Infineon Technologies Austria AG
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: DE102017118864.9 20170818
- Main IPC: H01L29/861
- IPC: H01L29/861 ; H01L29/66 ; H01L21/265 ; H01L29/06 ; H01L29/32
Abstract:
A method of processing a power diode includes: creating an anode region and a drift region in a semiconductor body: and forming, by a single ion implantation processing step, each of an anode contact zone and an anode damage zone in the anode region. Power diodes manufactured by the method are also described.
Public/Granted literature
- US20190058065A1 Power Diode and Method of Manufacturing a Power Diode Public/Granted day:2019-02-21
Information query
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