- Patent Title: Wafer for examination and examination method of energy distribution
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Application No.: US16107585Application Date: 2018-08-21
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Publication No.: US10994368B2Publication Date: 2021-05-04
- Inventor: Seiichi Sai
- Applicant: DISCO CORPORATION
- Applicant Address: JP Tokyo
- Assignee: DISCO CORPORATION
- Current Assignee: DISCO CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Greer, Burns & Crain, Ltd.
- Priority: JP2017-159263 20170822
- Main IPC: B23K26/073
- IPC: B23K26/073 ; B23K26/03 ; B23K26/359 ; B23K26/06

Abstract:
There is provided a wafer for examination that is a wafer for examination with which energy distribution in a region of a light condensing spot of a laser beam with which irradiation is carried out from the upper surface side of a wafer is checked, and is a wafer for examination in which a first metal layer and a second metal layer different in specific heat or a melting point are formed over an upper surface of a wafer. In an examination method of energy distribution, the energy distribution of the laser beam is checked based on a processing mark formed in the first and second metal layers of the wafer for examination.
Public/Granted literature
- US20190061050A1 WAFER FOR EXAMINATION AND EXAMINATION METHOD OF ENERGY DISTRIBUTION Public/Granted day:2019-02-28
Information query
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