Invention Grant
- Patent Title: Sputtering target and manufacturing method thereof
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Application No.: US16510274Application Date: 2019-07-12
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Publication No.: US10995401B2Publication Date: 2021-05-04
- Inventor: Jun Ku Ahn
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon
- Priority: KR10-2018-0157444 20181207
- Main IPC: H01J37/34
- IPC: H01J37/34 ; C23C14/34 ; C23C14/06 ; C23C14/54 ; B23P15/26
Abstract:
A sputtering target includes: a base configured to transfer heat in a basal plane direction; and a first heat sink disposed on a sidewall of the base, the first heat sink configured to transfer heat along a direction that is different from the basal plane direction.
Public/Granted literature
- US20200181761A1 SPUTTERING TARGET AND MANUFACTURING METHOD THEREOF Public/Granted day:2020-06-11
Information query
