Invention Grant
- Patent Title: Method of forming aluminum nitride film and method of manufacturing semiconductor light-emitting element
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Application No.: US16452454Application Date: 2019-06-25
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Publication No.: US10995403B2Publication Date: 2021-05-04
- Inventor: Yojiro Ichiraku
- Applicant: NICHIA CORPORATION
- Applicant Address: JP Anan
- Assignee: NICHIA CORPORATION
- Current Assignee: NICHIA CORPORATION
- Current Assignee Address: JP Anan
- Agency: Foley & Lardner LLP
- Priority: JPJP2018-121103 20180626
- Main IPC: C23C16/30
- IPC: C23C16/30 ; H01L33/54 ; H01L33/56 ; H01L21/02 ; H01L33/20 ; C23C16/02 ; C30B33/02 ; C30B29/40 ; C30B25/18 ; H01L21/324 ; C30B29/68 ; C30B25/02
Abstract:
A method of forming an aluminum nitride film includes: preparing a substrate that comprises, in a surface thereof, a plurality of concave portions that are separated from each other; forming an aluminum nitride film on said surface of the substrate and on an inner surface of each of the concave portions such that open holes are formed in a portion of the aluminum nitride film corresponding to each of the concave portions, each of the holes being smaller than each of openings of the concave portions; and applying heat treatment to the substrate with the aluminum nitride film formed thereon in a nitrogen gas containing a carbon monoxide gas to close the holes formed in the aluminum nitride film.
Public/Granted literature
- US20190390330A1 METHOD OF FORMING ALUMINUM NITRIDE FILM AND METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING ELEMENT Public/Granted day:2019-12-26
Information query
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