Invention Grant
- Patent Title: Measurement device, method and display device
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Application No.: US16070708Application Date: 2016-01-27
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Publication No.: US10996569B2Publication Date: 2021-05-04
- Inventor: Yuji Takagi , Fumihiko Fukunaga , Yasunori Goto
- Applicant: HITACHI HIGH-TECH CORPORATION
- Applicant Address: JP Tokyo
- Assignee: HITACHI HIGH-TECH CORPORATION
- Current Assignee: HITACHI HIGH-TECH CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Miles & Stockbridge, P.C.
- International Application: PCT/JP2016/052225 WO 20160127
- International Announcement: WO2017/130304 WO 20170803
- Main IPC: G06K9/00
- IPC: G06K9/00 ; G03F7/20 ; H01J37/22 ; G06K9/62 ; G06T7/00 ; H01L23/544

Abstract:
An overlay measurement method using a reference image is an effective method for an overlay measurement in a product circuit. However, there is a problem that it is not possible to obtain an ideal reference image in a process of prototyping.
A measurement device described in a specific embodiment of the present invention includes an imaging unit that captures an image of a circuit pattern of a semiconductor wafer surface by an optical microscope or an electronic microscope, a pattern recognition unit that extracts a first pattern and a second pattern from the image captured by the imaging unit, a reference image generation unit that synthesizes a first reference image using the first pattern extracted from a plurality of the images and synthesizes a second reference image using the second pattern extracted from the plurality of images, a quantification unit that quantifies a first difference that is a difference between the first reference image and the first pattern and a second difference that is a difference between the second reference image and the second pattern, and a calculation unit that calculates an overlay amount included in the circuit pattern using the first difference and the second difference.
A measurement device described in a specific embodiment of the present invention includes an imaging unit that captures an image of a circuit pattern of a semiconductor wafer surface by an optical microscope or an electronic microscope, a pattern recognition unit that extracts a first pattern and a second pattern from the image captured by the imaging unit, a reference image generation unit that synthesizes a first reference image using the first pattern extracted from a plurality of the images and synthesizes a second reference image using the second pattern extracted from the plurality of images, a quantification unit that quantifies a first difference that is a difference between the first reference image and the first pattern and a second difference that is a difference between the second reference image and the second pattern, and a calculation unit that calculates an overlay amount included in the circuit pattern using the first difference and the second difference.
Public/Granted literature
- US20190033728A1 MEASUREMENT DEVICE, METHOD AND DISPLAY DEVICE Public/Granted day:2019-01-31
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