Invention Grant
- Patent Title: Reticle backside inspection method
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Application No.: US16115699Application Date: 2018-08-29
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Publication No.: US10997706B2Publication Date: 2021-05-04
- Inventor: Zi-Wen Chen , Po-Chung Cheng , Chih-Tsung Shih , Li-Jui Chen , Shih-Chang Shih
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McDermott Will & Emery LLP
- Main IPC: G06T7/00
- IPC: G06T7/00 ; H04N5/00 ; G06T7/521 ; G03F7/20 ; G03F1/84 ; H04N5/232

Abstract:
A method of inspecting a reticle includes obtaining a first image of a surface of the reticle at a first height by scanning the reticle surface with a light source at the first height of the reticle surface relative to a reference surface height of the reticle surface and obtaining a second image of the reticle surface at a second height by scanning the reticle surface with the light source at the second height of the reticle surface relative to the reference surface height of the reticle surface. The second height is different from the first height. The first and the second images are then combined to obtain a surface profile image of the reticle.
Public/Granted literature
- US20190102875A1 RETICLE BACKSIDE INSPECTION METHOD Public/Granted day:2019-04-04
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