Invention Grant
- Patent Title: Multilayer device having an improved antiferromagnetic pinning layer and a corresponding manufacturing method
-
Application No.: US16449567Application Date: 2019-06-24
-
Publication No.: US10998131B2Publication Date: 2021-05-04
- Inventor: Kai Schlage , Tatiana Gurieva , Svenja Willing , Lars Bocklage , Ralf Röhlsberger
- Applicant: Deutsches Elektronen-Synchrotron DESY
- Applicant Address: DE Hamburg
- Assignee: Deutsches Elektronen-Synchrotron DESY
- Current Assignee: Deutsches Elektronen-Synchrotron DESY
- Current Assignee Address: DE Hamburg
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: EP18179692 20180625
- Main IPC: G11C11/00
- IPC: G11C11/00 ; H01L29/76 ; G11C11/14 ; H01F41/32 ; G01R33/09 ; H01F10/32 ; H01L43/02 ; H01L43/12

Abstract:
A method of producing a multilayer device, such as a multilayer magnetoelectronic device, and a device with an improved magnetic pinning. The device includes a multilayer structure including an antiferromagnetic pinning layer and one or more ferromagnetic layers. Each of the ferromagnetic layers has a boundary surface with the antiferromagnetic layer. The antiferromagnetic layer is deposited at a nonzero angle of incidence with respect to a direction perpendicular to the plane of extension of the antiferromagnetic pinning layer. This oblique incidence deposition gives rise to a surface roughness of the antiferromagnetic pinning layer which is described by a plane wave function.
Public/Granted literature
Information query