Invention Grant
- Patent Title: Substrate processing method and substrate processing apparatus
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Application No.: US16232645Application Date: 2018-12-26
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Publication No.: US10998198B2Publication Date: 2021-05-04
- Inventor: Kazuya Koyama
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Nath, Goldberg & Meyer
- Agent Jerald L. Meyer
- Priority: JPJP2017-254141 20171228
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L21/67
Abstract:
There is provided a substrate processing method for performing an etching processing by immersing a substrate in a processing liquid containing a chemical liquid and silicon, the substrate processing method including: a preparation step of setting a supply flow rate of the chemical liquid based on a replenishment amount of the chemical liquid and a replenishment amount of the silicon; and a replenishment step of supplying the chemical liquid at the set supply flow rate of the chemical liquid and dissolving a set replenishment amount of the silicon in the processing liquid.
Public/Granted literature
- US20190206695A1 SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS Public/Granted day:2019-07-04
Information query
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