Invention Grant
- Patent Title: Semiconductor device and method of manufacturing same
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Application No.: US16540159Application Date: 2019-08-14
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Publication No.: US10998257B2Publication Date: 2021-05-04
- Inventor: Tomohiro Taniguchi
- Applicant: Kabushiki Kaisha Toshiba , Toshiba Electronic Devices & Storage Corporation
- Applicant Address: JP Minato-ku; JP Minato-ku
- Assignee: Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- Current Assignee: Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- Current Assignee Address: JP Minato-ku; JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JPJP2019-044019 20190311
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L23/00 ; H01L21/48

Abstract:
A semiconductor device includes a semiconductor body; an electrode provided on the semiconductor body and electrically connected to the semiconductor body; a first metal layer selectively provided on the electrode; an insulating layer surrounding the first metal layer on the electrode; and a second metal layer provided on the first metal layer. The insulating layer includes a first surface and a second surface adjacent to the first surface. The first surface contacts a top surface of the first metal layer at an outer edge of the first metal layer. The second metal layer has an outer edge contacting the second surface of the insulating layer.
Public/Granted literature
- US20200294897A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME Public/Granted day:2020-09-17
Information query
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