Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16590024Application Date: 2019-10-01
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Publication No.: US10998268B2Publication Date: 2021-05-04
- Inventor: Sung-Lae Oh , Kwang-Hwi Park , Tae-Sung Park , Chang-Man Son , Jung-Hoon Lee , Soo-Nam Jung , Ji-Eun Joo , Ji-Hyun Choi
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2019-0005564 20190116
- Main IPC: H01L23/528
- IPC: H01L23/528 ; G11C5/06 ; H01L27/11529 ; H01L27/11519 ; H01L27/1157 ; H01L27/11524 ; H01L27/11565 ; H01L27/11573 ; H01L27/11582 ; H01L27/11556

Abstract:
A semiconductor device includes an internal circuit and a power mesh configured to transmit an operating voltage to the internal circuit. The power mesh includes first power lines extending in a first direction and arranged in a second direction intersecting with the first direction, when viewed from a top; second power lines sharing lanes with the first power lines and at least partially overlapping with the first power lines in the second direction; first power straps extending in the second direction and coupled to the first power lines; and second power straps extending in the second direction and coupled to the second power lines. Each of the first and second power lines may have a width of the same size as a width of each lane in sections where they do not overlap, and may have a width of a size smaller than the width of each lane in sections where they overlap.
Public/Granted literature
- US20200227352A1 SEMICONDUCTOR DEVICE Public/Granted day:2020-07-16
Information query
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