Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16360341Application Date: 2019-03-21
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Publication No.: US10998295B2Publication Date: 2021-05-04
- Inventor: Hiromasa Hayashi , Shunsuke Tomoto , Yusuke Mori
- Applicant: DENSO CORPORATION
- Applicant Address: JP Kariya
- Assignee: DENSO CORPORATION
- Current Assignee: DENSO CORPORATION
- Current Assignee Address: JP Kariya
- Agency: Posz Law Group, PLC
- Priority: JPJP2016-199127 20161007
- Main IPC: H01L25/00
- IPC: H01L25/00 ; H01L25/07 ; H01L23/495 ; H01L23/31 ; H01L23/40 ; G01R19/00 ; G01R15/14 ; H01L23/00 ; H01L25/18 ; H01L23/48

Abstract:
A semiconductor device includes: a first chip to restrict current flow in a first direction through a current path; a second chip to restrict the current flow in a second direction opposite to the first direction, through the current path; a wiring having one end connected to the first chip and the other end connected to the second chip, and provided as a part of the current path by relaying the first chip and the second chip; a lead frame having a first lead arranged and fixed with the first chip and a second lead is arranged and fixed with the second chip; and molding resin sealing the first chip, the second chip, the wiring and the lead frame. The wiring is a shunt resistor having a resistive body. The lead frame further has a sense terminal to detect a voltage drop across the resistive body.
Public/Granted literature
- US20190221549A1 SEMICONDUCTOR DEVICE Public/Granted day:2019-07-18
Information query
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