Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
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Application No.: US16715465Application Date: 2019-12-16
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Publication No.: US10998312B2Publication Date: 2021-05-04
- Inventor: Che-Cheng Chang , Chih-Han Lin
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
- Current Assignee Address: TW Hsin-Chu
- Agency: Cooper Legal Group, LLC
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L29/78 ; H01L29/06 ; H01L29/08 ; H01L29/423 ; H01L29/66 ; H01L21/306

Abstract:
A semiconductor device includes at least one semiconductor fin, a gate electrode, at least one gate spacer, and a gate dielectric. The semiconductor fin includes at least one recessed portion and at least one channel portion. The gate electrode is present on at least the channel portion of the semiconductor fin. The gate spacer is present on at least one sidewall of the gate electrode. The gate dielectric is present at least between the channel portion of the semiconductor fin and the gate electrode. The gate dielectric extends farther than at least one end surface of the channel portion of the semiconductor fin.
Information query
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