Invention Grant
- Patent Title: Semiconductor device with fin structures and manufacturing method thereof
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Application No.: US16544826Application Date: 2019-08-19
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Publication No.: US10998427B2Publication Date: 2021-05-04
- Inventor: Chia-Wei Chang , Chiung Wen Hsu , Yu-Ting Weng
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McDermott Will & Emery LLP
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/78 ; H01L21/762 ; H01L21/308 ; H01L21/311 ; H01L21/3065
Abstract:
A semiconductor device includes a substrate, a fin structure protruding from the substrate, a gate insulating layer covering a channel region formed of the fin structure, a gate electrode layer covering the gate insulating layer, and isolation layers disposed on opposite sides of the fin structure. The fin structure includes a bottom portion, a neck portion, and a top portion sequentially disposed on the substrate. A width of the neck portion is less than a width of the bottom portion and a width of a portion of the top portion.
Information query
IPC分类:
