Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16480945Application Date: 2017-03-16
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Publication No.: US10998436B2Publication Date: 2021-05-04
- Inventor: Jun Fujita , Naoto Kaguchi , Fumio Wada
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Chiyoda-ku
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Chiyoda-ku
- Agency: Xsensus LLP
- International Application: PCT/JP2017/010743 WO 20170316
- International Announcement: WO2018/167925 WO 20180920
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/288 ; H01L21/3213 ; H01L23/00 ; H01L29/45 ; H01L29/66 ; H01L29/739
Abstract:
A semiconductor device having high reliability is obtained. A semiconductor device includes a semiconductor substrate, a first gate interconnection, a second gate interconnection, a first metal portion, an insulating member, and a second metal portion. The first gate interconnection and the second gate interconnection are disposed on a main surface of the semiconductor substrate with an interval therebetween. The first metal portion is formed on the first gate interconnection and the second gate interconnection. The first metal portion has a top surface located opposite to the semiconductor substrate at a region between the first gate interconnection and the second gate interconnection. A recess is formed in the top surface. The insulating member fills at least a portion of the recess. The second metal portion extends from an upper surface of the insulating member onto the top surface of the first metal portion.
Public/Granted literature
- US20190393333A1 SEMICONDUCTOR DEVICE Public/Granted day:2019-12-26
Information query
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