A semiconductor device according to an embodiment includes a semiconductor substrate having a first plane and a second plane, a semiconductor element provided in the semiconductor substrate, the semiconductor element including a gate insulating film provided in the first plane, a first electrode provided on the first plane, a second electrode provided on the first electrode, the second electrode including a first metal material, the second electrode having a film thickness of (65 [g·μm·cm−3])/(density of the first metal material [g·cm−3]) or more, a first solder portion provided on the second electrode, a third electrode provided on the first solder portion, a fourth electrode provided on the first plane, a fifth electrode provided on the fourth electrode, the fifth electrode including a second metal material, the fifth electrode having a film thickness of (65 [g·μm·cm−3])/(density of the second metal material [g·cm−3]) or more, a second solder portion provided on the fifth electrode, and a sixth electrode provided on the second solder portion.