Invention Grant
- Patent Title: Oxide semiconductor film and semiconductor device
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Application No.: US16864364Application Date: 2020-05-01
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Publication No.: US10998449B2Publication Date: 2021-05-04
- Inventor: Masahiro Takahashi , Kengo Akimoto , Shunpei Yamazaki
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi
- Agency: Robinson Intellectual Property Law Office
- Agent Eric J. Robinson
- Priority: JP2011-089349 20110413
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L27/12 ; H01L29/24 ; H01L29/66 ; H01L29/04 ; H01L27/32 ; C01G15/00 ; G02F1/1343 ; G02F1/1362 ; G02F1/1368 ; H01L21/02
Abstract:
To provide an oxide semiconductor film having stable electric conductivity and a highly reliable semiconductor device having stable electric characteristics by using the oxide semiconductor film. The oxide semiconductor film contains indium (In), gallium (Ga), and zinc (Zn) and includes a c-axis-aligned crystalline region aligned in the direction parallel to a normal vector of a surface where the oxide semiconductor film is formed. Further, the composition of the c-axis-aligned crystalline region is represented by In1+δGa1-δO3(ZnO)m (0
Public/Granted literature
- US20200259019A1 OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE Public/Granted day:2020-08-13
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