Invention Grant
- Patent Title: Semiconductor device, delay circuit, and related method
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Application No.: US16085870Application Date: 2018-08-01
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Publication No.: US10998893B2Publication Date: 2021-05-04
- Inventor: Hiroshi Akamatsu , Zhi Qi Huang
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- International Application: PCT/CN2018/098031 WO 20180801
- International Announcement: WO2020/024149 WO 20200206
- Main IPC: G11C7/00
- IPC: G11C7/00 ; H03K5/134 ; G11C11/408 ; H03K5/131
Abstract:
Methods and apparatus for generating a delayed output signal from an input signal applied to an RC delay circuit of a semiconductor device during an active mode. The RC delay circuit is configured to pull up a voltage level on a node responsive to a reset signal during a stand-by mode.
Public/Granted literature
- US20200304113A1 SEMICONDUCTOR DEVICE, DELAY CIRCUIT, AND RELATED METHOD Public/Granted day:2020-09-24
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