Invention Grant
- Patent Title: Substrate processing apparatus, nozzle base, and manufacturing method for semiconductor device
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Application No.: US15692187Application Date: 2017-08-31
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Publication No.: US11001924B2Publication Date: 2021-05-11
- Inventor: Hidenari Yoshida
- Applicant: HITACHI KOKUSAI ELECTRIC INC.
- Applicant Address: JP Tokyo
- Assignee: HITACHI KOKUSAI ELECTRIC INC.
- Current Assignee: HITACHI KOKUSAI ELECTRIC INC.
- Current Assignee Address: JP Tokyo
- Agent Volpe Koenig
- Priority: JPJP2016-189639 20160928
- Main IPC: C23C16/455
- IPC: C23C16/455 ; H01L21/205 ; H01L21/31 ; C23C16/40 ; C23C16/458

Abstract:
Provided is a processing container formed of a reaction tube and a manifold that supports the reaction tube from below, and adapted to process a substrate inside, a nozzle adapted to supply a processing gas to the substrate, and a connecting portion adapted to erect the nozzle inside the processing container. The connecting portion includes (1) a fixing portion formed of a cylindrical portion inserted into an introduction portion provided at the manifold, and a flange plate formed at an end portion of the cylindrical portion, and (2) a detachable portion formed of an elbow engaged with the flange plate, and an installation portion in which the nozzle is installed.
Public/Granted literature
- US20180087152A1 SUBSTRATE PROCESSING APPARATUS, NOZZLE BASE, AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE Public/Granted day:2018-03-29
Information query
IPC分类: