Invention Grant
- Patent Title: Detector pixel, array substrate, apparatus and method for detecting intensity of ray
-
Application No.: US16460282Application Date: 2019-07-02
-
Publication No.: US11002862B2Publication Date: 2021-05-11
- Inventor: Miao Zhang , Wuxia Fu , Songmei Sun , Ran Zhang
- Applicant: HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD. , BOE TECHNOLOGY GROUP CO., LTD.
- Applicant Address: CN Anhui; CN Beijing
- Assignee: HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.,BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee: HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.,BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee Address: CN Anhui; CN Beijing
- Agency: Brooks Kushman P.C.
- Priority: CN201810896670.4 20180808
- Main IPC: G01T1/24
- IPC: G01T1/24 ; H01L27/146

Abstract:
A detector pixel, an array substrate, an apparatus and a method for detecting an intensity of a ray are provided. The detector pixel includes substrate, first transistor, second transistor, storage capacitor, photosensitive element, first control line, second control line, first data line and second data line. The first and the second transistors are dual-gate transistors; the first transistor has a bottom gate connected to the first control line, a top gate connected to the second control line, a first electrode connected to the storage capacitor, and a second electrode connected to the first data line; the second transistor has a bottom gate connected to the second control line, a top gate connected to the first control line, a first electrode connected to the storage capacitor, and a second electrode connected to the second data line; and the storage capacitor is connected to the photosensitive element.
Public/Granted literature
- US20200049839A1 DETECTOR PIXEL, ARRAY SUBSTRATE, APPARATUS AND METHOD FOR DETECTING INTENSITY OF RAY Public/Granted day:2020-02-13
Information query