Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
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Application No.: US16722394Application Date: 2019-12-20
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Publication No.: US11002997B2Publication Date: 2021-05-11
- Inventor: Seigo Namioka , Yasutaka Nakashiba
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JPJP2018-239567 20181221
- Main IPC: G02F1/025
- IPC: G02F1/025
Abstract:
A semiconductor device includes a first insulating layer, an optical waveguide formed on the first insulating layer, a fixed charge layer formed on the first insulating layer such that the fixed charge layer covers the optical waveguide, and a second insulating layer formed on the fixed charge layer.
Information query
