Invention Grant
- Patent Title: Composition for film formation, film, resist underlayer film-forming method, production method of patterned substrate, and compound
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Application No.: US16205502Application Date: 2018-11-30
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Publication No.: US11003079B2Publication Date: 2021-05-11
- Inventor: Naoya Nosaka , Gouji Wakamatsu , Tsubasa Abe , Yuushi Matsumura , Masayuki Miyake , Yoshio Takimoto
- Applicant: JSR CORPORATION
- Applicant Address: JP Tokyo
- Assignee: JSR CORPORATION
- Current Assignee: JSR CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Element IP, PLC
- Priority: JPJP2016-112281 20160603
- Main IPC: G03F7/00
- IPC: G03F7/00 ; G03F7/11 ; G03F7/26 ; G03F7/09 ; C08F34/02 ; C09D161/12 ; C08G8/20 ; C07D311/74 ; C07D311/92 ; C07D405/14 ; C08G61/10 ; C09D165/00 ; H01L21/027 ; C08J5/18

Abstract:
The composition for film formation includes a compound including a group of the formula (1) and a solvent. In the formula (1), R1 to R4 each independently represent a hydrogen atom, a monovalent organic group having 1 to 20 carbon atoms, or R1 to R4 taken together represent a cyclic structure having 3 to 20 ring atoms together with the carbon atom or a carbon chain to which R1 to R4 bond. Ar1 represents a group obtained by removing (n+3) hydrogen atoms from an aromatic ring of an arene having 6 to 20 carbon atoms. n is an integer of 0 to 9. R5 represents a hydroxy group, a halogen atom, a nitro group, or a monovalent organic group having 1 to 20 carbon atoms.
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