Invention Grant
- Patent Title: Methods for aligning a physical layer to a pattern formed via multi-patterning, and associated systems
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Application No.: US16556927Application Date: 2019-08-30
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Publication No.: US11003164B2Publication Date: 2021-05-11
- Inventor: Kohei Hosokawa
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L23/544
- IPC: H01L23/544 ; G05B19/4097 ; H01L21/033 ; G03F7/20

Abstract:
Methods of aligning a number of physical layers to a pattern formed via multi-patterning are disclosed. A method may include determining a misalignment vector between a first layer and a second layer used to form a pattern via multi-patterning. The method may also include calculating, based on the misalignment vector between the first layer and the second layer, a center position of the pattern. Further, the method may include aligning a third layer to center position of the pattern. A computing system and a processing system are also described.
Public/Granted literature
- US20210063997A1 METHODS FOR ALIGNING A PHYSICAL LAYER TO A PATTERN FORMED VIA MULTI-PATTERNING, AND ASSOCIATED SYSTEMS Public/Granted day:2021-03-04
Information query
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