Invention Grant
- Patent Title: Method for ultra-shallow etching using neutral beam processing based on gas cluster ion beam technology
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Application No.: US15758436Application Date: 2016-07-22
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Publication No.: US11004692B2Publication Date: 2021-05-11
- Inventor: Sean R. Kirkpatrick , Richard C. Svrluga
- Applicant: Exogenesis Corporation
- Applicant Address: US MA Billerica
- Assignee: Exogenesis Corporation
- Current Assignee: Exogenesis Corporation
- Current Assignee Address: US MA Billerica
- Agency: Burns & Levinson, LLP
- Agent Jerry Cohen
- International Application: PCT/US2016/043628 WO 20160722
- International Announcement: WO2017/065857 WO 20170420
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L21/3213 ; C03C15/02 ; H01L21/02 ; H01L21/306 ; H01L21/3065 ; H01L21/3105 ; C03C15/00 ; H01L21/265 ; H01L21/308
Abstract:
A method for shallow etching a substrate surface forms a shallow modified substrate layer overlying unmodified substrate using an accelerated neutral beam and etches the modified layer, stopping at the unmodified substrate beneath, producing controlled shallow etched substrate surfaces.
Public/Granted literature
- US20180247831A1 METHOD FOR ULTRA-SHALLOW ETCHING USING NEUTRAL BEAM PROCESSING BASED ON GAS CLUSTER ION BEAM TECHNOLOGY Public/Granted day:2018-08-30
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