Conductive interconnect having a semi-liner and no top surface recess
Abstract:
According to embodiments of the present invention, a semiconductor wafer includes a substrate and an interlayer dielectric located on the substrate. The interlayer dielectric includes an interconnect. A barrier layer is located in between the interconnect and the interlayer dielectric. A semi-liner layer is located in between the interconnect and the barrier layer. The interlayer dielectric, the interconnect, and barrier layer form a substantially planar surface opposite the substrate. The interconnect has an interconnect height from a base to the substantially planar surface and a semi-liner height of the semi-liner layer is less than the interconnect height such that liner layer does not extend to the planar surface.
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