Invention Grant
- Patent Title: Conductive interconnect having a semi-liner and no top surface recess
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Application No.: US16131354Application Date: 2018-09-14
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Publication No.: US11004735B2Publication Date: 2021-05-11
- Inventor: Cornelius B. Peethala , Michael Rizzolo , Oscar Van Der Straten , Chih-Chao Yang
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent James Nock
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L21/768 ; H01L23/532

Abstract:
According to embodiments of the present invention, a semiconductor wafer includes a substrate and an interlayer dielectric located on the substrate. The interlayer dielectric includes an interconnect. A barrier layer is located in between the interconnect and the interlayer dielectric. A semi-liner layer is located in between the interconnect and the barrier layer. The interlayer dielectric, the interconnect, and barrier layer form a substantially planar surface opposite the substrate. The interconnect has an interconnect height from a base to the substantially planar surface and a semi-liner height of the semi-liner layer is less than the interconnect height such that liner layer does not extend to the planar surface.
Public/Granted literature
- US20200090988A1 CONDUCTIVE INTERCONNECT HAVING A SEMI-LINER AND NO TOP SURFACE RECESS Public/Granted day:2020-03-19
Information query
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